Samsung starts production of 14nm EUV based DDR5 DRAM

samsung starts producing euv based ddr5 dram

By applying five EUV layers to its 14nm DRAM, Samsung has achieved the highest bit density while enhancing the overall wafer productivity by approximately 20%.

Samsung today announced that it has started mass production of the industry’s smallest, 14nm, DRAM based on extreme ultraviolet (EUV) technology. After the industry-first EUV DRAM shipment in March of last year, Samsung has increased the number of EUV layers to five to deliver the finest, most advanced DRAM process for its DDR5 solutions.

“We have led the DRAM market for nearly three decades by pioneering key patterning technology innovations. Today, Samsung is setting another technology milestone with multi-layer EUV that has enabled extreme miniaturization at 14nm — a feat not possible with the conventional argon fluoride (ArF) process,” said Jooyoung Lee, Senior Vice President and Head of DRAM Product & Technology at Samsung Electronics.

With the help of this technology, Samsung aims to provide the best memory solutions to the industry, addressing the upcoming demand for faster memory solutions for 5G, AI, and the Metaverse. By applying five EUV layers to its 14nm DRAM, Samsung has achieved the highest bit density while enhancing the overall wafer productivity by approximately 20%. Also, the 14nm process will decrease power consumption by nearly 20% compared to the previous-generation DRAM node.

Due to the latest DDR5 standard, Samsung’s 14nm DRAM will help unlock speeds of up to 7.2 gigabits per second (Gbps), which is more than twice the DDR4 speed of up to 3.2Gbps.These advanced DRAM chips will be first used in cloud servers and data centers for AI, Big Data, and ML processes.